most citedGrowth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces

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cond-mat.mtrl-sci2006★ 1 cited

Growth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces

Katsutoshi Fujiwara, Akira Ishii, Toshikazu Ebisuzaki +4

We have investigated the stability of the 1ML-GaN on the O-polarity ZnO(000-1) interface structure using the first-principles calculation. We have found in our calculated results t…