Vacancy-Enhanced $N-N$ Bonding and Deep Level Complex Defect Formation in $\beta -G{a}_2{O}_3$

Asiyeh Shokri, Yevgen Melikhov, Yevgen Syryanyy +2

Nitrogen implantation can make $\beta -G{a}_2{O}_3$ semi-insulating, but the atomic origin responsible for carrier trapping remains unresolved. Here, hybrid density functional theory is use…