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cond-mat.mtrl-sci2026
Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…
cond-mat.mtrl-sci2024
Nano-optical investigation of grain boundaries, strain and edges in CVD grown MoS monolayers
Frederico B. Sousa, Rafael Battistella Nadas, Rafael Martins +6
The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optic…