193 citations · 373 across the 11 of their papers we have counts for
11 papers
Unveiling hole-facilitated amorphisation in pressure-induced phase transformation of silicon
Tong Zhao, Shulin Zhong, Yuxin Sun +9
Pressure-induced phase transformation occurs during silicon (Si) wafering processes. \b{eta}-tin (Si-II) phase is formed at high pressures, followed by the transformation to Si-XII…
Phonon-limited carrier mobilities and Hall factors in 4H-SiC from first principles
Tianqi Deng, Deren Yang, Xiaodong Pi
Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. T…
Recent Progress of Heterostructures Based on Two Dimensional Materials and Wide Bandgap Semiconductors
Ying Liu, Yanjun Fang, Deren Yang +2
Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials…
Towards Wafer-Scale Production of TwoDimensional Transition Metal Chalcogenides
Peijian Wang, Deren Yang, Xiaodong Pi
Two-dimensional (2D) Transition Metal Chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of propert…
Nitrogen decoration of basal plane dislocations in 4H-SiC
Jiajun Li, Hao Luo, Guang Yang +4
Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitro…
Improving the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements
Yuanchao Huang, Rong Wang, Yixiao Qian +3
The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full…