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physics.ins-det2026
Low-field carrier mobilities in silicon irradiated to extreme fluences
I. Bloch, B. Bruers, C. -T. Klein +6
The low-field carrier mobilities in <100> silicon were quantified as a function of the 1MeV neutron-equivalent fluence up to cm and for temperatures between 2…
physics.ins-det2024
TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors
Ilona-Stefana Ninca, Ingo Bloch, Ben Bruers +12
The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p…