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physics.app-ph2026
Complete Au-free Metallization Platform for UWBG AlGaN channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates
Mafruda Rahman, Dharun Manoharan, Tariq Jamil +8
Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonst…
physics.app-ph2026
800 C Air-Ambient Operation of Extreme-Bandgap AlGaN (x>0.6) Digital and Random-Alloy Channel HEMTs
Abdullah Al Mamun Mazumder, Tariq Jamil, Mafruda Rahman +11
This work demonstrates the high-temperature (room to 800 C) operation of thin AlGaN digital alloy (DA) short-period superlattice (SPSL), and random alloy…
physics.app-ph2026
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
Tariq Jamil, Abdullah Al Mamun Mazumder, S M Tazbiul Hasan +9
In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using…