2 papers
physics.app-ph2026
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
Tariq Jamil, Abdullah Al Mamun Mazumder, S M Tazbiul Hasan +9
In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using…
cond-mat.mtrl-sci2016
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
Yiheng Lin, Wei Shi, Jizhong Li +8
High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (AR…