4 papers
Complete Au-free Metallization Platform for UWBG AlGaN channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates
Mafruda Rahman, Dharun Manoharan, Tariq Jamil +8
Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonst…
800 C Air-Ambient Operation of Extreme-Bandgap AlGaN (x>0.6) Digital and Random-Alloy Channel HEMTs
Abdullah Al Mamun Mazumder, Tariq Jamil, Mafruda Rahman +11
This work demonstrates the high-temperature (room to 800 C) operation of thin AlGaN digital alloy (DA) short-period superlattice (SPSL), and random alloy…
A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
Tariq Jamil, Abdullah Al Mamun Mazumder, S M Tazbiul Hasan +9
In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using…
Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
Yiheng Lin, Wei Shi, Jizhong Li +8
High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (AR…