Vacancy-Enhanced $N-N$ Bonding and Deep Level Complex Defect Formation in ${\hat{I}}^2-G{a}_2{O}_3$

Asiyeh Shokri, Yevgen Melikhov, Yevgen Syryanyy +2

The formation and electronic properties of nitrogen-related defect complexes in ${\hat{I}}^2-G{a}_2{O}_3$ are investigated using first-principles calculations. Starting from the energetically f…