Y. Melikhov

collaborators

3 papers

cond-mat.mtrl-sci2026

Vacancy-Enhanced $N - N$ Bonding and Deep Level Complex Defect Formation in $I^^{2} - G a_{2} O_{3}$

Asiyeh Shokri, Yevgen Melikhov, Yevgen Syryanyy +2

The formation and electronic properties of nitrogen-related defect complexes in $I^^{2} - G a_{2} O_{3}$ are investigated using first-principles calculations. Starting from the energetically f…

cond-mat.mtrl-sci2026

Molecular Nitrogen Formation in Nitrogen-Implanted (100) $I^^{2} - G a_{2} O_{3}$ Revealed by Temperature-Dependent $N$ $K$ -edge XANES

I. N. Demchenko, Y. Syryanyy, A. Shokri +13

The realization of $p$ -type doping in wide-band-gap oxide semiconductors remains a major challenge, particularly in $I^^{2} - G a_{2} O_{3}$ where nitrogen has long been considered a potential…

cond-mat.soft2025

Sedimenting rigid particles of certain shapes approach a stationary orientation

Chandra Shekhar, Harish Mirajkar, Piotr Zdybel +2

This work investigates experimentally and numerically the dynamics of rigid particles settling under gravity in a highly viscous fluid. We demonstrate that certain shapes: cones, c…

Vacancy-Enhanced N−N Bonding and Deep Level Complex Defect Formation in I^2−Ga2​O3​

Molecular Nitrogen Formation in Nitrogen-Implanted (100) I^2−Ga2​O3​ Revealed by Temperature-Dependent N K-edge XANES

Sedimenting rigid particles of certain shapes approach a stationary orientation

Vacancy-Enhanced $N - N$ Bonding and Deep Level Complex Defect Formation in $I^^{2} - G a_{2} O_{3}$

Molecular Nitrogen Formation in Nitrogen-Implanted (100) $I^^{2} - G a_{2} O_{3}$ Revealed by Temperature-Dependent $N$ $K$ -edge XANES