30 citations · 68 across the 6 of their papers we have counts for
6 papers
Modelling the mean inner potential of alloyed and strained materials
Marco Schowalter, Peer Kruse, Andreas Rosenauer
In this publication, we study the influence of strain and alloying on the mean inner potential (MIP) using density functional theory (DFT) within an augmented plane waves plus loca…
Using convolutional neural networks for stereological characterization of 3D hetero-aggregates based on synthetic STEM data
Lukas Fuchs, Tom Kirstein, Christoph Mahr +5
The structural characterization of hetero-aggregates in 3D is of great interest, e.g., for deriving process-structure or structure-property relationships. However, since 3D imaging…
Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy
P. S. Sokolov, M. Yu. Petrov, T. Mehrtens +4
A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor comp…
Growth of Oriented Au Nanostructures: Role of Oxide at the Interface
Ashutosh Rath, J. K. Dash, R. R. Juluri +3
We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\cir…
Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces
Ashutosh Rath, J. K. Dash, R. R. Juluri +4
We report on the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions (\approx 3\times 10^{-10} mbar) on clean Si(100) surfaces. For this…
Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs
D. Litvinov, D. Gerthsen, A. Rosenauer +4
We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-…