3 papers
cond-mat.mes-hall2026
Voltage-driven transition from steady-state fluctuations to phase-transition noise in nanoscale VO devices
Sebastian Werner Schmid, Zoltán Balogh, Botond Sánta +6
We investigate the electrically driven metal-to-insulator transition (MIT) in nanoscale vanadium dioxide (VO) Mott memristor through noise spectroscopy and two-dimensional resi…
cond-mat.mes-hall2024
Picosecond Femtojoule Resistive Switching in Nanoscale VO Memristors
S. W. Schmid, L. Pósa, T. N. Török +8
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiti…
cond-mat.mes-hall2023
Neural information processing and time-series prediction with only two dynamical memristors
Dániel Molnár, Tímea Nóra Török, János Volk +9
Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers la…