3 papers
cond-mat.mtrl-sci2026
Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Aida Sheibani, Mohammad Zamani, Charles Paillard +9
Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have re…
cond-mat.mes-hall2025
Classical to Quantum Diffusive Transport in Atomically Thin Semiconductors Capped with High-k Dielectric
Jaroslaw Pawlowski, Dickson Thian, Repaka Maheswar +5
The dielectric environment surrounding semiconductors plays a crucial role in determining device performance, a role that becomes especially pronounced in atomically thin semicondu…
cond-mat.mes-hall2025
Phase Coherent Transport in Two-Dimensional Tellurium Flakes
Mohammad Hafijur Rahaman, Nathan Sawyers, Mourad Benamara +5
Elemental tellurium (Te) is a compelling van der Waals material due to its interesting chiral crystal structure and predicted topological properties. Here, we report the fabricatio…