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cond-mat.mtrl-sci2026
Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
Aida Sheibani, Mohammad Zamani, Charles Paillard +9
Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have re…
cond-mat.mtrl-sci2026
Deformation-Potential-Driven Photostriction in Layered Ferroelectrics
S. Puri, R. Rodriguez, C. Dansou +5
The coupling between electronic excitations and lattice deformation in van der Waals ferroelectrics is governed by a competition between the electron deformation potential and the…
cond-mat.mtrl-sci2024
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Calbi Gunder, Mohammad Zamani Alavijeh, Emmanuel Wangila +7
The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-qua…