Joshua T. Buontempo

collaborators

2 papers

cond-mat.mtrl-sci2026

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown

Julian Gervassi Saga, Joshua T Buontempo, Nabasindhu Das +3

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ modulation-doped field-effect transistors (MODFETs) incorporating a high-quality Al2O3 gate dielectric and SiNx passivation are demonstrate…

cond-mat.mtrl-sci2024

In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

Cameron A. Gorsak, Henry J. Bowman, Katie R. Gann +9

In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successfu…

β−(Al0.19​Ga0.81​)2​O3​/Ga2​O3​ Modulation-Doped Field-Effect Transistors with > 6 kV Breakdown

In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system

$β - (A l_{0.19} G a_{0.81})_{2} O_{3} / G a_{2} O_{3}$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown