activity
20242026
collaborators

5 papers

physics.ins-det2026

TPA-TCT Analysis of the RD50-MPW4 Monolithic Pixel Particle Detector

Francisco Rogelio Palomo, Jorge Jiménez-Sánchez, Jorge Jiménez-Sánchez +12

The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivit…

physics.ins-det2026

Influence of Radiation and AC Coupling on Time Performance of Analog Pixels Test Structures in 65 nm CMOS technology

Gianluca Aglieri Rinella, Luca Aglietta, Matias Antonelli +44

Monolithic Active Pixel Sensors (MAPS) in advanced CMOS imaging technologies are key to next-generation tracking systems for high-energy physics, where radiation hardness and preci…

physics.ins-det2025

Further Characterisation of Digital Pixel Test Structures Implemented in a 65 nm CMOS Process

Gianluca Aglieri Rinella, Nicole Apadula, Anton Andronic +55

The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at…

physics.ins-det2025

Detection efficiency and spatial resolution of Monolithic Active Pixel Sensors bent to different radii

Anton Andronic, Pascal Becht, Mihail Bogdan Blidaru +37

Bent monolithic active pixel sensors are the basis for the planned fully cylindrical ultra low material budget tracking detector ITS3 of the ALICE experiment. This paper presents r…

physics.ins-det2024

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Gianluca Aglieri Rinella, Luca Aglietta, Matias Antonelli +43

In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high ene…