Heteroepitaxial Growth of PbSe on InP Substrates via Lattice-Matched III-V Buffer Layers

Biridiana Rodriguez, Mark Martino, Brody Yeung +2

Detector cost remains a barrier to the widespread adoption of mid-wave infrared (3-5 micron) technology. PbSe, an inexpensive narrow band gap IV-VI semiconductor that has been used…