collaborators

13 papers

physics.ins-det2026

Stable Charge Collection and Sub-45 ps Time Resolution in a 4H-SiC PIN Detector Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Jingxuan He, Congcong Wang, Yi Zhan +3

A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection per…

physics.ins-det2026

Stability of Charge Collection Efficiency in a Novel Graphene-Optimized Silicon Carbide Detector Under 160 keV X-Ray Irradiation

Yingjie Huang, Congcong Wang, Jingxuan He +4

A novel graphene-optimized silicon carbide PIN detector was fabricated. Its electrical properties, charge collection performance and signal rise time were evaluated under non-irrad…

physics.ins-det2026

Stability of Charge Collection Efficiency and Time Resolution in a Novel Ultra-fast Graphene-Optimized Silicon Carbide Detector Under X-ray Irradiation

Zhenyu Jiang, Congcong Wang, Jingxuan He +4

A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge col…

physics.ins-det2026

Beam Test Characterization of Silicon Microstrip Detector Flight-Model Ladders for the AMS-02 Upgrade

Dexing Miao, Giovanni Ambrosi, Mattia Barbanera +56

The AMS-02 experiment plans to install a new silicon microstrip tracker layer (Layer-0) on top of the existing detector, increasing the cosmic-ray acceptance by a factor of 3. Laye…

physics.ins-det2026

A Telescope System for Charge and Position Measurement of High Energy Nuclei

Dexing Miao, Zhiyu Xiang, Giovanni Ambrosi +43

A high-granularity telescope system with a large sensitive area and low material budget has been developed for high-energy heavy ion beam tests. The telescope consists of nine laye…

physics.ins-det2026

Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation

Jiaqi Zhou, Sen Zhao, Xiyuan Zhang +6

This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial verti…