10 citations · 20 across the 2 of their papers we have counts for
5 papers
Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area
J. Ventura, R. Ferreira, J. B. Sousa +1
Magnetic tunnel junctions (MTJs) with partially oxidized 9 ÅAlO-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in hig…
Nanoscopic processes of Current Induced Switching in thin tunnel junctions
J. Ventura, J. P. Araujo, J. B. Sousa +3
In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve…
Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications
J. M. Teixeira, R. F. A. Silva, J. Ventura +7
We present a detailed study on domain imaging, Kerr effect magnetometry (MOKE) and magnetoresistance (MR), for a series of 20 nm CoFeB thin films, both as-…
Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures
J. Ventura, J. B. Sousa, M. A. Salgueiro da Silva +2
We report magnetoresistance curves of CoFe nano-oxide specular spin valves of MnIr/CoFe/nano-oxidized CoFe/CoFe/Cu/CoFe/nano-oxidized CoFe/Ta at different temperatures from 300 to…
Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces
J. Ventura, J. B. Sousa, Y. Liu +2
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to elect…