activity
20062020
most citedClustered vacancies in ZnO: Chemical aspects and consequences on physical properties

56 citations · 137 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2020

Exploring the effect of varying regime of ion fluence on optical and surface electronic properties of CVD Grown Graphene

Tanmay Mahanta, Sanjeev Kumar, D. Kanjilal +1

In this work, the effect of the ion fluence-dependent defect formation on the modification of surface electronic and optical properties of graphene has been investigated. The chemi…

cond-mat.mtrl-sci2017★ 56 cited

Clustered vacancies in ZnO: Chemical aspects and consequences on physical properties

S. Pal, N. Gogurla, Avishek Das +7

Chemical nature of point defects, their segregation, cluster or complex formation in ZnO is an important area of investigation. In this report, 1.2 MeV Ar ion beam is used to incor…

cond-mat.mtrl-sci2010★ 16 cited

Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

Soubhik Chattopadhyay, Sreetama Dutta, Palash Pandit +7

We report a systematic study on 1.2 MeV Ar^8+ irradiated ZnO by x-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measure…

cond-mat.mtrl-sci2009★ 46 cited

Controlled defects in ZnO by low energy Ar irradiation

Soubhik Chattopadhyay, Sreetama Dutta, D. Jana +6

We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific com…

cond-mat.mtrl-sci2006★ 19 cited

A Hybrid model for the origin of photoluminescence from Ge nanocrystals in SiO matrix

A. Singha, A. Roy, D. Kabiraj +1

In spite of several articles, the origin of visible luminescence from germanium nanocrystals in SiO matrix is controversial even today. Some authors attribute the luminescence…