3 papers
cond-mat.mtrl-sci2026
Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…
cond-mat.mes-hall2026
Resonance-Enhanced Four-Wave Mixing Imaging for Mapping Defect Regions in Vanadium-Doped WS2 Monolayers
Felipe Menescal, Frederico B. Sousa Mingzu Liu, Ana P. M. Barboza +8
Defect engineering is crucial for tuning 2D transition metal dichalcogenide properties for quantum and optoelectronic applications. While conventional photoluminescence (PL) and Ra…
cond-mat.mes-hall2025
Strong magneto-optical responses of an ensemble of defect-bound excitons in ambient exposed WS and WSe monolayers
Frederico B. Sousa, Alessandra Ames, Mingzu Liu +8
Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is pos…