collaborators

4 papers

cond-mat.mtrl-sci2026

Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics

Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11

Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…

cond-mat.mes-hall2026

Resonance-Enhanced Four-Wave Mixing Imaging for Mapping Defect Regions in Vanadium-Doped WS2 Monolayers

Felipe Menescal, Frederico B. Sousa Mingzu Liu, Ana P. M. Barboza +8

Defect engineering is crucial for tuning 2D transition metal dichalcogenide properties for quantum and optoelectronic applications. While conventional photoluminescence (PL) and Ra…

cond-mat.mes-hall2025

Multi Moire Networks in Engineered Lateral Hetero-Bilayers: Programmable Phononic Reconfiguration and Second Harmonic Generation

Suman Kumar Chakraborty, Frederico B. Sousa, Chakradhar Sahoo +14

Moire engineering in two-dimensional transition metal dichalcogenides enables access to correlated quantum phenomena. Realizing such effects demands simultaneous control over twist…

cond-mat.mes-hall2025

Strong magneto-optical responses of an ensemble of defect-bound excitons in ambient exposed WS and WSe monolayers

Frederico B. Sousa, Alessandra Ames, Mingzu Liu +8

Transition metal dichalcogenide (TMD) monolayers present a singular coupling in their spin and valley degrees of freedom. Moreover, by applying an external magnetic field it is pos…