1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…
cond-mat.mes-hall2026★ 1 cited
Resonance-Enhanced Four-Wave Mixing Imaging for Mapping Defect Regions in Vanadium-Doped WS2 Monolayers
Felipe Menescal, Frederico B. Sousa Mingzu Liu, Ana P. M. Barboza +8
Defect engineering is crucial for tuning 2D transition metal dichalcogenide properties for quantum and optoelectronic applications. While conventional photoluminescence (PL) and Ra…