5 papers
Anisotropic Dopant and Strain Architectures in WS Nanocrystals Driven by Growth Kinetics
Frederico B. Sousa, Raphaela de Oliveira, Matheus J. S. Matos +11
Dopant distribution in two-dimensional semiconductors is typically assumed to be stochastic, limiting deterministic defect engineering. Here, we show that non-equilibrium growth ki…
First principles and scanning tunneling spectroscopical evidences for thermodynamically stable "on-top" sulfur divacancy in monolayer WS
Weiru Chen, John C. Thomas, Yihuang Xiong +10
Chalcogen vacancies in monolayer transition metal dichalcogenides (TMDs), such as WS, play a crucial role in various applications ranging from optoelectronics and catalysis t…
Graphene-driven correlated electronic states in one dimensional defects within WS
Antonio Rossi, John C. Thomas, Johannes T. Küchle +19
Tomonaga-Luttinger liquid (TLL) behavior in one-dimensional systems has been predicted and shown to occur at semiconductor-to-metal transitions within two-dimensional materials. Re…
Understanding and Controlling V-Doping and S-Vacancy Behavior in Two-Dimensional Semiconductors- Toward Predictive Design
Shreya Mathela, Zhuohang Yu, Zachary D. Ward +11
Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technolog…
Matching-Free Depth Recovery from Structured Light
Zhuohang Yu, Kai Wang, Kun Huang +1
We introduce a novel approach for depth estimation using images obtained from monocular structured light systems. In contrast to many existing methods that depend on image matching…