most citedImpurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

15 citations · 15 across the 1 of their papers we have counts for

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1 paper

cond-mat.other2006★ 15 cited

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi +6

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentrat…