264 citations · 310 across the 3 of their papers we have counts for
3 papers
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee +5
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence o…
Transport spectroscopy of a single dopant in a gated silicon nanowire
H. Sellier, G. P. Lansbergen, J. Caro +5
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic sta…
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
H. Sellier, G. P. Lansbergen, J. Caro +5
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consi…