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Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2
Deep Jariwala, Sarah L. Howell, Kan-Sheng Chen +7
The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semi…
Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors
Deep Jariwala, Vinod K. Sangwan, Jung-Woo Ted Seo +6
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of trad…
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS
In Soo Kim, Vinod K. Sangwan, Deep Jariwala +11
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to m…
Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics
Vinod K. Sangwan, Deep Jariwala, Ken Everaerts +6
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit l…
Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode
Deep Jariwala, Vinod K. Sangwan, Chung-Chiang Wu +5
The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of re…
Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
Vinod K. Sangwan, Deep Jariwala, Stephen A. Filippone +6
The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-κ top-gate dielectric. Here, we report the first statistical analysis of…