21 citations · 51 across the 9 of their papers we have counts for
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High Temperature Quantum Kinetic Effect in Silicon Nanosandwiches
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin +4
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent tran…
Room temperature de Haas - van Alphen effect in silicon nanosandwiches
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin +3
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent tran…
The Effect of Dipole Boron Centers on the Electroluminescence of Nanoscale Silicon p+-n Junctions
Nikolay Bagraev, Leonid Klyachkin, Roman Kuzmin +2
Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-inf…
Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities
Nikolay Bagraev, Eduard Danilovskii, Wolfgang Gehlhoff +7
We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (…
Negative-U Centers as a Basis of Topological Edge Channels
Nikolay Bagraev, Eduard Danilovskii, Wolfgang Gehlhoff +4
We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm,…
Polarized electroluminescence from silicon nanostructures
Nikolay Bagraev, Eduard Danilovsky, Dmitrii Gets +5
We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) conf…