Bismuth layer properties in the ultrathin Bi-FeNi multilayer films probed by spectroscopic ellipsometry

N. N. Kovaleva, D. Chvostova, O. Pacherova +6

Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi lay…