49 citations · 131 across the 9 of their papers we have counts for
5 papers · 1 filter
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET
Gino Giusi, Giuseppe Iannaccone, Felice Crupi +1
In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This…
Criticisms on and Comparison of Experimental Channel Backscattering Extraction Methods
Gino Giusi, Felice Crupi, Paolo Magnone
In this paper we critically review and compare experimental methods, based on the Lundstrom model, to extract the channel backscattering ratio in nano MOSFETs. Basically two experi…
Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs
Gino Giusi, Giuseppe Iannaccone, Debrabata Maji +1
In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one s…
A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering
Gino Giusi, Giuseppe Iannaccone, Felice Crupi
We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view…
Modelling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters
Andrea Campera, Giuseppe Iannaccone, Felice Crupi
In this paper we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage characteristics it is possible to ext…