Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios

Xu Yang, Sheng Zhang, Ke Wei +4

We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3…