70 citations · 239 across the 15 of their papers we have counts for
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Atomic origin of high temperature electron trapping in MOS devices
Xiao Shen, Sarit Dhar, Sokrates T. Pantelides
MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can…
High On/Off Ratio Memristive Switching of Manganite-Cuprate Bilayer by Interfacial Magnetoelectricity
Xiao Shen, Timothy J. Pennycook, David Hernandez-Martin +7
Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing…
Two-dimensional nanovaristors at grain boundaries account for memristive switching in polycrystalline BiFeO3
Xiao Shen, Kuibo Yin, Yevgeniy S. Puzyrev +4
Memristive switching in polycrystalline materials is widely attributed to the formation and rupture of conducting filaments, believed to be mediated by oxygen-vacancy redistributio…