activity
20062020
most citedHigh-Temperature Photocurrent Mechanism of \b{eta}-Ga2O3 Based MSM Solar-Blind Photodetectors

128 citations · 205 across the 15 of their papers we have counts for

collaborators

15 papers

physics.app-ph2020

Epitaxial Growth of -GaO Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

Xiao Tang, Kuang-Hui Li, Yue Zhao +7

The epitaxial growth of technically-important -GaO semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crys…

physics.app-ph2020

\b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70%

Che-Hao Liao, Kuang-Hui Li, C. G. Torres. Castanedo +2

In this work, we have demonstrated wide-composition-range \b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for \b{eta}-(AlxGa1-x)2O3 covering bandgaps fr…

physics.app-ph2020★ 3 cited

Band Alignments of Emerging Wurtzite BAlN and BGaN Semiconductors

Ahmad Al Sulami, Feras Alqatari, Xiaohang Li

The wurtzite III-Nitrides family of semiconductors, which include the compounds GaN, InN, and AlN, along with their derivative ternary alloys, is highly priced for its wide range o…

physics.app-ph2020★ 2 cited

Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study

Che-Hao Liao, Feras AlQatari, Xiaohang Li

In this work, the energy band structures of BGaN and BAlN alloys are systematically studied through first-principles calculation using HSE hybrid density functional theory by MedeA…

physics.app-ph2020

BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

Rongyu Lin, Xinwei Liu, Kaikai Liu +3

The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been…

physics.app-ph2020★ 1 cited

BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer

Wen Gu, Yi Lu, Rongyu Lin +7

The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously d…

physics.app-ph2019

Improvement of temperature uniformity of induction-heated T-shape susceptor for high-temperature MOVPE

Kuang-Hui Li, Hamad S. Alotaibi, Xiaohang Li

The induction heating is a common method applied in metalorganic vapor phase epitaxy (MOVPE) especially for higher-temperature growth conditions. However, compared to the susceptor…

physics.app-ph2019

Determination of band offsets of Ga2O3/FTO heterojunction for current spreading for high temperature and UV applications

Carlos G. Torres-Castanedo, Kuang-Hui Li, Xiaohang Li

Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those…

physics.app-ph2019

Conduction and valence band offsets of Ga2O3/h-BN heterojunction

Kuang-Hui Li, Carlos G. Torres-Castanedo, Suresh Sundaram +5

h-BN and Ga2O3 are two promising semiconductor materials. However, the band alignment of the Ga2O3/h-BN heterojunction has not been identified, hindering device development. In thi…

physics.app-ph2019★ 11 cited

AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device

Yi Lu, Hsin-Hung Yao, Jingtao Li +4

Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been d…

physics.app-ph2018★ 128 cited

High-Temperature Photocurrent Mechanism of \b{eta}-Ga2O3 Based MSM Solar-Blind Photodetectors

B. R. Tak, Manjari Garg, Sheetal Dewan +5

High-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited \b{eta}-Ga2O3 thin films has been investigated. These photodete…

physics.app-ph2018★ 10 cited

Polarization properties of wurtzite III nitride indicate the principle of polarization engineering

Kaikai Liu, Xiaohang Li

The spontaneous and piezoelectric polarizations of III-nitrides considerably affect the operation of various III-nitride-based devices. We report an ab initio study of the spontane…

cond-mat.mtrl-sci2018★ 2 cited

Optical properties of BAlN and BGaN for applications in latticematched UV optical structures

Feras AlQatari, Muhammad Sajjad, Ronghui Lin +3

The optical properties of BAlN and BGaN ternary alloys are investigated using first-principle calculation. Hybrid density functional theory is applied to determine the refractive i…

cond-mat.mtrl-sci2006★ 18 cited

Improved properties of epitaxial YNixMn1-xO3 films by annealing under high magnetic fields

Yanwei Ma, Aixia Xu, Xiaohang Li +4

The effect of annealing under a magnetic field on the microstructure and properties of YNixMn1-xO3 (x=0.33 and 0.5) films has been investigated. It is found that the ferromagnetic…

cond-mat.supr-con2006★ 30 cited

Enhanced critical current density of MgB2 superconductor synthesized in high magnetic fields

Yanwei Ma, Aixia Xu, Xianping Zhang +3

The effect of high magnetic fields on the current carrying properties of both MgB2 bulks and Fe-sheathed tapes was investigated following different thermal sequences. It is found t…