128 citations · 163 across the 12 of their papers we have counts for
15 papers
Epitaxial Growth of -GaO Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector
Xiao Tang, Kuang-Hui Li, Yue Zhao +7
The epitaxial growth of technically-important -GaO semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crys…
\b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70%
Che-Hao Liao, Kuang-Hui Li, C. G. Torres. Castanedo +2
In this work, we have demonstrated wide-composition-range \b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for \b{eta}-(AlxGa1-x)2O3 covering bandgaps fr…
Band Alignments of Emerging Wurtzite BAlN and BGaN Semiconductors
Ahmad Al Sulami, Feras Alqatari, Xiaohang Li
The wurtzite III-Nitrides family of semiconductors, which include the compounds GaN, InN, and AlN, along with their derivative ternary alloys, is highly priced for its wide range o…
Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study
Che-Hao Liao, Feras AlQatari, Xiaohang Li
In this work, the energy band structures of BGaN and BAlN alloys are systematically studied through first-principles calculation using HSE hybrid density functional theory by MedeA…
BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor
Rongyu Lin, Xinwei Liu, Kaikai Liu +3
The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been…
BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer
Wen Gu, Yi Lu, Rongyu Lin +7
The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously d…