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physics.optics2010★ 14 cited
Metrology of EUV Masks by EUV-Scatterometry and Finite Element Analysis
J. Pomplun, S. Burger, F. Schmidt +3
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) n…
physics.optics2006★ 6 cited
Rigorous FEM-Simulation of EUV-Masks: Influence of Shape and Material Parameters
J. Pomplun, S. Burger, F. Schmidt +4
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical pa…