activity
19982020
most citedNoise in Al single electron transistors of stacked design

73 citations · 181 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2020★ 20 cited

Nanoscale Real-Time Detection of Quantum Vortices at Millikelvin Temperatures

A. Guthrie, S. Kafanov, M. T. Noble +6

Since we still lack a theory of classical turbulence, attention has focused on the conceptually simpler turbulence in quantum fluids. Can such systems of identical singly-quantized…

cond-mat.mes-hall2018★ 11 cited

High quality factor mechanical resonance in a silicon nanowire

D. E. Presnov, S. Kafanov, A. A. Dorofeev +4

Resonance properties of nanomechanical resonators based on doubly clamped silicon nanowires, fabricated from silicon-on-insulator and coated with a thin layer of aluminum, were exp…

cond-mat.supr-con2006

Cooper Pair Transport in a Resistor-Biased Josephson Junction Array

Sergey V. Lotkhov, Vladimir A. Krupenin, Alexander B. Zorin

The dc transport properties of long arrays of small Al Josephson junctions, biased through on-chip Cr resistors, are studied. The IV-characteristics show a large Coulomb threshold…

cond-mat.mes-hall2000★ 53 cited

Metallic single-electron transistor without traditional tunnel barriers

V. A. Krupenin, A. B. Zorin, D. E. Presnov +2

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electr…

cond-mat.mes-hall1999★ 1 cited

Aluminum Single Electron Transistors with Islands Isolated from a Substrate

V. A. Krupenin, D. E. Presnov, A. B. Zorin +1

The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the c…

cond-mat.mes-hall1998★ 73 cited

Noise in Al single electron transistors of stacked design

V. A. Krupenin, D. E. Presnov, M. N. Savvateev +3

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a…

cond-mat.mes-hall1998★ 23 cited

Multilayer technique developed for fabricating Nb-based single-electron devices

Alexey B. Pavolotsky, Thomas Weimann, Hansjoerg Scherer +3

A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/A…