Spin polarization of strongly interacting 2D electrons: the role of disorder

S. A. Vitkalov, M. P. Sarachik, T. M. Klapwijk

In high-mobility silicon MOSFET's, the $g^{\ast }{m}^{\ast }$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^{\ast }{\mu }_B{H}_s=2E_F$ are in surp…