activity
20062021
most citedPost-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor

185 citations · 478 across the 8 of their papers we have counts for

collaborators

8 papers

physics.app-ph2021

2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density

Jinshui Miao, Chloe Leblanc, Xiwen Liu +7

Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that e…

cond-mat.mes-hall2021★ 48 cited

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

Kiyoung Jo, Pawan Kumar, Joseph Orr +10

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage…

physics.app-ph2020★ 185 cited

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor

Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5

In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…

physics.app-ph2020★ 2 cited

Determination of Dielectric Functions and Exciton Oscillator Strength of Two-Dimensional Hybrid Perovskites

Baokun Song, Jin Hou, Haonan Wang +10

Two-dimensional (2D) hybrid organic inorganic perovskite (HOIP) semiconductors have attracted widespread attention as a platform of next generation optoelectronic devices benefitin…

physics.optics2020

Giant gate-tunability of complex refractive index in semiconducting carbon nanotubes

Baokun Song, Fang Liu, Haonan Wang +11

Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-fil…

cond-mat.mes-hall2020★ 101 cited

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Jinshui Miao, Xiwen Liu, Kiyoung Jo +8

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) laye…