66 citations · 98 across the 5 of their papers we have counts for
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cond-mat.mtrl-sci2013★ 66 cited
Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates
M. Hugues, P. A. Shields, F. Sacconi +7
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1…
cond-mat.mtrl-sci2001★ 15 cited
Free carrier effects in gallium nitride epilayers: the valence band dispersion
P. A. Shields, R. J. Nicholas, F. M. Peeters +2
The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magneto-excitonic states in polarised interband magneto-reflectivity and is found to…