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cond-mat.mes-hall2001★ 7 cited
Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
M. Roberts, Y. C. Chung, S. Lyapin +3
We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness between 0-1200 Å. A negati…
cond-mat2001★ 15 cited
Magneto-photoluminescence of GaN/AlGaN quantum wells: valence band reordering and excitonic binding energies
P. A. Shields, R. J. Nicholas, N. Grandjean +1
A re-ordered valence band in GaN/AlGaN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g-factor in magneto-luminescence spe…