3 papers
cond-mat.mtrl-sci2026
Monolithic integration of optically anisotropic GeSe-based films on GaAs by templated solid-phase epitaxy
Kira J. Martin, Autumn Y. Lee, Pranav Mahaadev +6
Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizi…
cond-mat.mtrl-sci2025
Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
Kelly Xiao, Bryce Wong, Jarod Meyer +2
PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elem…
cond-mat.mtrl-sci2025
Heteroepitaxial growth of highly anisotropic films on GaAs
Kelly Xiao, Virat Tara, Pooja D. Reddy +6
The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In…