9 papers
The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith +2
In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dip…
Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells
Merritt P. R. Losert, S. N. Coppersmith, Mark Friesen
Spatial variations of the valley splitting in a quantum well present a key challenge for conveyor-mode shuttling of electron spins in Si/SiGe, giving rise to Landau-Zener-like exci…
Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
Róbert Németh, Vatsal K. Bandaru, Pedro Alves +7
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; howeve…
Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
Jonathan C. Marcks, Emily Eagen, Emma C. Brann +12
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate e…
Automated electrostatic characterization of quantum dot devices in single- and bilayer heterostructures
Merritt P. R. Losert, Dario Denora, Barnaby van Straaten +6
As quantum dot (QD)-based spin qubits advance toward larger, more complex device architectures, rapid, automated device characterization and data analysis tools become critical. Th…
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…