activity
19992019
most citedElectron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

515 citations · 938 across the 11 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2019

Effect of defect-induced cooling on graphene hot-electron bolometers

Abdel El Fatimy, Peize Han, Nicholas Quirk +9

At high phonon temperature, defect-mediated electron-phonon collisions (supercollisions) in graphene allow for larger energy transfer and faster cooling of hot electrons than the n…

cond-mat.mes-hall2019★ 55 cited

Ambient Effects on Photogating in MoS2 Photodetectors

Peize Han, Eli Adler, Yijing Liu +5

Atomically thin transition metal dichalcogenides (TMDs) are ideal candidates for ultrathin optoelectronics that is flexible and semitransparent. Photodetectors based on TMDs show r…

cond-mat.mes-hall2017

Ultra-broadband photodetectors based on epitaxial graphene quantum dots

Abdel El Fatimy, Anindya Nath, Byoung Don Kong +7

Graphene is an ideal material for hot-electron bolometers, due to its low heat capacity and weak electron-phonon coupling. Nanostructuring graphene with quantum dot constrictions y…

cond-mat.mes-hall2017★ 52 cited

Highly Sensitive MoS2 Photodetectors with Graphene Contacts

Peize Han, Luke St. Marie, Qing X. Wang +4

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Altho…

cond-mat.mes-hall2015★ 155 cited

Epitaxial graphene quantum dots for high-performance THz bolometers

A. El Fatimy, R. L. Myers-Ward, A. K. Boyd +3

Light absorption in graphene causes a large change in electron temperature, due to low electronic heat capacity and weak electron phonon coupling [1-3], making it very attractive a…

cond-mat.mes-hall2014

Low Carrier Density Epitaxial Graphene Devices On SiC

Yanfei Yang, Lung-I Huang, Yasuhiro Fukuyama +6

Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean d…