most citedGrowth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

11 citations · 11 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2007★ 11 cited

Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

X. W. Zhao, T. R. Lemberger, F. Y. Yang

Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$…