collaborators

1 paper

physics.ins-det2026

Development of Segmented 4H-SiC LGADs

Vojtěch Kráčmar, Jan Chochol, Adam Klimsza +11

The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle d…