221 citations · 825 across the 13 of their papers we have counts for
13 papers
Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
Sanyam Bajaj, Omor F. Shoron, Pil Sung Park +7
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements…
Large Area Single Crystal (0001) Oriented MoS2 Thin Films
Masihhur R. Laskar, Lu Ma, ShanthaKumar K +6
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and techno…
Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures
D. N. Nath, P. S. Park, Z. C. Yang +1
In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers…
Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion
Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath +3
A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak…
Low Resistance GaN/InGaN/GaN Tunnel Junctions
Sriram Krishnamoorthy, Fatih Akyol, Pil Sung Park +1
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 Ω cm2. The design…
GdN Nanoisland-Based GaN Tunnel Junctions
Sriram Krishnamoorthy, Thomas Kent, Jing Yang +3
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (s…