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Electric fields and valence band offsets at strained [111] heterojunctions
S. Picozzi, A. Continenza, A. J. Freeman
[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio…
Influence of growth direction and strain conditions on the band line-up at GaSb/InSb and InAs/InSb interfaces
S. Picozzi, A. Continenza, A. J. Freeman
First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have…
Effects of epitaxial strain and ordering direction on the electronic properties of (GaSb)_1/(InSb)_1 and (InAs)_1/(InSb)_1 superlattices
S. Picozzi, A. Continenza, A. J. Freeman
The structural and electronic properties in common anion (GaSb)_1/(InSb)_1 and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have been determined using the local dens…