149 citations · 341 across the 6 of their papers we have counts for
6 papers
Metallic behaviour in SOI quantum wells with strong intervalley scattering
V. T. Renard, I. Duchemin, Y. Niida +3
The fundamental properties of valleys are recently attracting growing attention due to electrons in new and topical materials possessing this degree-of-freedom and recent proposals…
Valley polarization assisted spin polarization in two dimensions
V. T. Renard, B. A. Piot, X. Waintal +7
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties thr…
Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
H. W. Liu, T. Fujisawa, Y. Ono +4
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoele…
Anomalous Resistance Ridges Along Filling Factor
K. Takashina, M. Brun, T. Ota +5
We report anomalous structure in the magnetoresistance of SiO/Si(100)/SiO quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi…
Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi +6
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentrat…
Valley Polarization in Si(100) at Zero Magnetic Field
K. Takashina, Y. Ono, A. Fujiwara +2
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO/(100)Si/SiO quantum well is examined through transport measurements. We demonstrat…