299 citations · 2.5k across the 42 of their papers we have counts for
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cond-mat.mtrl-sci2010★ 155 cited
Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition
Dmitry Ruzmetov, Don Heiman, Bruce B. Claflin +2
Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (…
cond-mat.mtrl-sci2010★ 160 cited
Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
Dmitry Ruzmetov, Gokul Gopalakrishnan, Changhyun Ko +2
Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of par…