most cited20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories

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cond-mat.mtrl-sci2026

Strain-Induced Metal-to-Insulator Transition in Antiferromagnetic SrCrO Thin Films

S. Jöhr, A. Carta, J. Moreno +11

Antiferromagnetic (AF) metals are rare, yet they combine properties attractive for spintronic devices like robustness against stray fields and electrical readout. Among AF metal ox…