62 citations · 98 across the 5 of their papers we have counts for
6 papers
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +3
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical…
Room temperature donor incorporation for quantum devices: arsine on germanium
Emily V. S. Hofmann, Taylor J. Z. Stock, Oliver Warschkow +3
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, ef…
Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy
Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +8
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resis…
Bottom-up assembly of metallic germanium
G. Scappucci, W. M. Klesse, L. A. Yeoh +7
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these r…
Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(001)
Kane M. O'Donnell, Oliver Warschkow, Asif Suleman +3
We investigate the chemical and structural configuration of acetophenone on Si(001) using synchrotron radiation core-level spectroscopy techniques and density functional theory cal…
Atomic-scale structure of the SrTiO3(001)-c(6x2) reconstruction: Experiments and first-principles calculations
C. H. Lanier, A. van de Walle, N. Erdman +7
The c(6x2) is a reconstruction of the SrTiO3(001) surface that is formed between 1050-1100oC in oxidizing annealing conditions. This work proposes a model for the atomic structure…