1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang +15
In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectr…
cs.ET2025★ 1 cited
Cryogenic Characterization of Ferroelectric Non-volatile Capacitors
Madhav Vadlamani, Dyutimoy Chakraborty, Jianwei Jia +5
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and hig…